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| DC COMPONENTS CO., LTD. R LB120A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR Description Designed for use in high-voltage switching applications. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Base Current (pulse) Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IC IB IB PD PD TJ TSTG Rating 600 400 6 100 200 20 40 0.8 7 +150 -55 to +150 Unit V V V mA mA mA mA W W o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) .050 Typ (1.27) 321 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE1 hFE2 380s, Duty Cycle 2% Min 600 400 5 8 10 Typ - Max 10 10 10 0.4 0.75 1 36 Unit V V V A A A V V V - Test Conditions IC=100A, IE=0 IC=10mA, IB=0 IE=10A, IC=0 VCB=550V, IE=0 VCE=400V, IB=0 VEB=6V, IC=0 IC=50mA, IB=10mA IC=100mA, IB=20mA IC=50mA, IB=10mA IC=10mA, VCE=10V IC=50mA, VCE=10V Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage DC Current Gain(1) (1)Pulse Test: Pulse Width (1) |
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